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INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3357DESCRIPTIONLow Noise and High GainNF = 1.1 dB TYP., G = 8.0 dB TYP.a@V = 10 V, I = 7 mA, f = 1.0 GHzCE CNF = 1.8 dB TYP., G = 9.0 dB TYP.a@V = 10 V, I = 40 mA, f = 1.0 GHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UHF and CATVband.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter Voltage 12 VCEOV Emitter-Base Voltage 3.0 VEBOI Collector Current-Continuous 0.1 ACCollector Power DissipationP 1.2 WC@T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconduct