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SMD Type TransistorsNPN Transistors2SC33571.70 0.1 Features Low noise and high gain High power gain Large Ptot0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 100 mA Collector Power Dissipation PC 1.2 W Junction to Ambient Resistance Rth (j-a) 62.5 /W Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 12 V Emitter - base breakdown voltage VEBO IE= 100A IC= 0 3 Collector-base cut-off