Скачать даташит для 2sc3357:

DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3357 is an NPN silicon epitaxial transistor designed for(Unit: mm)low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic.4.50.11.50.11.60.2FEATURES Low Noise and High GainNF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,IC = 7 mA, f = 1.0 GHzCEBNF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,0.420.420.060.06IC = 40 mA, f = 1.0 GHz 1.50.470.06-0.033.0 Large PT in Small Package0.41+0.05PT : 2 W with 16 cm2 0.7 mm Ceramic Substrate.Term, ConnectionE : EmitterABSOLUTE MAXIMUM RATINGS (TA = 25 C)C : Collector (Fin)B : BaseCollector to Base Voltage VCBO 20 V(SOT-89)Collector to Emitter Voltage VCEO 12 VEmitter to Base Voltage V