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isc Silicon NPN Power Transistor 2SC3416DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 200V (Min)(BR)CEOComplement to Type 2SA1352Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, high-voltage driverapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 200 VCEOV Emitter-Base Voltage 5.0 VEBOI Collector Current-Continuous 0.1 ACI Collector Current-Peak 0.2 ACMCollector Power Dissipation1.2@ T =25aP WCTotal Power Dissipation5@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC3416ELECTRICAL CHARA