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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3419DESCRIPTIONLow Collector Saturation VoltageHigh power dissipationComplementary to 2SA1356100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 40 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 0.8 ACCollector Power DissipationP 5.0 WC@ Tc=25T Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3419ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBO