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2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.11.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) 32 High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 V1 :Gate Collector-emitter voltage VCEX 30 V2 :Source Collector-emitter voltage VCEO 20 V3 :Drain Emitter-base voltage VEBO 7 VUFM DC IC 1.5Collector current A Pulse ICP 2.5JEDEC Base current IB 150 mAJEITA P (Note1) 800 Collector power dissipation TOSHIBA 2-2U1AmW P (Note2) 500 Weight: 6.6 mg (typ.) Junction temperature Tj 150 CStorage temperature range Tstg -55 to 150 C