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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6145DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SA2223Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 230 VCBOV Collector-Emitter Voltage 230 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 15 ACI Base Current-Continuous 4.0 ABCollector Power DissipationP 160 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc website www.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2S