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Transistor2SC829Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification, oscillation, mixing, and IF stageof FM/AM radios.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5 VCollector current IC 30 mA1 2 31:EmitterCollector power dissipation PC 400 mW2:Collector3:Base2.54 0.15Junction temperature Tj 150 CJEDEC:TO92Storage temperature Tstg 55 ~ +150 CEIAJ:SC43AElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector to base voltage VCBO IC = 10 A, IE = 0 30 VCollector to emitter voltage VCEO IC = 2mA, IB = 0 20 VEmitter to base voltage VEBO IE =