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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD130DESCRIPTIONDC Current Gain -h = 15(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 10 VEBOI Collector Current-Continuous 3.0 ACI Collector Current-Peak 5.0 ACMI Base Current 1.0 ABP Collector Power Dissipation@T =25 25 WC CT Junction Temperature 150 JT Storage Temperature -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Tran