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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1301DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Collector Saturation Voltage-: V = 3.0V(Max.)@ I = 1ACE(sat) CWide area of safe operationBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 2 ACI Collector Current-Peak 8 ACMCollector Power DissipationP 45 WC@ T = 25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is reg