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2SD1306Silicon NPN EpitaxialADE-208-1144 (Z)1st. EditionMar. 2001ApplicationLow frequency amplifier, MutingOutlineMPAK311. Emitter2. Base23. Collector2SD1306Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector power dissipation PC 150 mWJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 CElectrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 30 V IC = 10 A, IE = 0voltageCollector to emitter breakdown V(BR)CEO 15 V IC = 1 mA, RBE = voltageEmitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0voltageCollector cutoff current ICBO 1.0 A VCB = 20

 

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 2sd1306.pdf Проектирование, MOSFET, Мощность

 2sd1306.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sd1306.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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