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isc Product Specificationisc Silicon NPN Power Transistor 2SD1503DESCRIPTION High Collector-Base Voltage -: V = 900V(Min)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier and power switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 900 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 6 ACCollector Power DissipationP 50 WC@T =25CT Junction Temperature 150 jStorage Temperature Range -65~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Product Specificationisc Silicon NPN Power Transistor 2SD1503ELECTRICAL CHARACTERISTICST =25 unles