Скачать даташит для 2sd2216j_e:

Transistor2SD2216JSilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1462J1.60 0.050.80 0.80 0.050.425 0.425FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).SS-Mini type package, allowing downsizing of the equipmentand automatic insertion through the tape packing.+0.050.850.03Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7 V1:Base2:Emitter EIAJ:SC81Collector current IC 100 mA3:Collector SSMini Flat Type Package (J type)Peak collector current ICP 200 mACollector power dissipation PC 125 mWMarking symbol : YJunction temperature Tj 125 CStorage temperature Tstg 55 ~ +125 CElectrical Characteristics (Ta=25