Скачать даташит для 2sd669al:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO 126 2SD669AL TRANSISTOR (NPN) FEATURES 1. EMITTER Low Frequency Power Amplifier 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 170 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current 1 A PC Collector Power Dissipation 1 W RJA Thermal Resistance from Junction to Ambient 125 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=100A,IE=0 200 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 170 V Emitter-base breakdown voltage V(BR)EBO