Скачать даташит для 2sk3060-s:

isc N-Channel MOSFET Transistor 2SK3060-SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 70 ADI Drain Current-Single Pluse 210 ADMP Total Dissipation @T =25 70 WD CMax. Operating Junction Temperature -55~150 TJStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 1.79th j-c1isc websitew