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Ordering number : EN86282SK3099LSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK3099LSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 400 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 9 ADrain Current (Pulse) IDP PW10s, duty cycle1% 36 A2.0 WAllowable Power Dissipation PDTc=25C35 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CAvalanche Enargy (Single Pulse) *1 EAS 92.6 mJAvalanche Current *2 IAV 9 A*1 VDD=50V, L=2mH, IAV=9A*2 L2mH, single pulseElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxD