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2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.4 (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 500 VDrain-gate voltage (RGS = 20 k) VDGR 500 VGate-source voltage VGSS 30 VDC (Note 1) ID 12 Drain current A Pulse (t = 1 ms) IDP 48 1: Gate (Note 1)2: Drain Drain power dissipation (Tc = 25C) 3: Source PD 40 WJEDEC Single pulse avalanche energy EAS 364 mJ(Note 2)JEITA SC-67Avalanche current IAR 12 ATOSHIBA 2-10U1BRepetitive avalanche energy (Note 3) EAR 4 mJWeigh