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isc N-Channel MOSFET Transistor 2SK3569DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 600 VDSS GSV Gate-Source Voltage 30 VGSI Drain Current-continuous@ TC=25 10 ADI Pulsed Drain Current 40 AD(puls)P Total Dissipation@T =25 45 Wtot CT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 2.87th j-c/WR Thermal Resistance, Junction to Ambient 62.5th j-a1isc websitewww.iscs