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2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.54 (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 600 VDrain-gate voltage (RGS = 20 k) VDGR 600 VGate-source voltage VGSS 30 V1: Gate DC (Note 1) ID 10 2: Drain Drain current A 3: Source Pulse (t = 1 ms) IDP 40 (Note 1) Drain power dissipation (Tc = 25C) JEDEC PD 45 WSingle pulse avalanche energy JEITA SC-67EAS 363 mJ(Note 2)TOSHIBA 2-10U1BAvalanche current IAR 10 AWeight : 1.7 g (typ.) Repetitive ava