Скачать даташит для 2sk3693-01mr:

2SK3693-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratings UnitDrain-source voltage VDS 450 VVDSX *5 450 VEquivalent circuit schematicContinuous drain current ID 17 APulsed drain current ID(puls] 68 AGate-source voltage VGS 30 VDrain(D)Repetitive or non-repetitive IAR *2 17 AMaximum Avalanche Energy EAS *1 221.9 mJMaximum Drain-Source dV/dt dVDS/dt *4 20 kV/sPeak Diode Recovery dV/dt dV/dt *3 5kV/sGate(G)Max. power dissipation PD Ta=25C 2.16WTc=25C 80 Source(S)