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2SK3698-01200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]TO-220ABFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratings UnitDrain-source voltage VDS 900 VVDSX *5 900 V Equivalent circuit schematicContinuous drain current ID 3.7 APulsed drain current ID(puls] 14.8 ADrain(D)Gate-source voltage VGS 30 VRepetitive or non-repetitive IAR *2 3.7 AMaximum Avalanche Energy EAS *1 171.1 mJMaximum Drain-Source dV/dt dVDS/dt *4 40 kV/sGate(G)Peak Diode Recovery dV/dt dV/dt *3 5kV/sMax. power dissipation PD Ta=25C 2.02W Source(S)Tc=25C 12