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2SK3699-01MR200305FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G Series Outline Drawings [mm]FeaturesTO-220FHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratings UnitDrain-source voltage VDS 900 VVDSX *5 900 VEquivalent circuit schematicContinuous drain current ID 3.7 APulsed drain current ID(puls] 14.8 AGate-source voltage VGS 30 VDrain(D)Repetitive or non-repetitive IAR *2 3.7 AMaximum Avalanche Energy EAS *1 171.1 mJMaximum Drain-Source dV/dt dVDS/dt *4 40 kV/sPeak Diode Recovery dV/dt dV/dt *3 5kV/sGate(G)Max. power dissipation PD Ta=25C 2.16WSource(S)Tc=25C