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isc N-Channel MOSFET Transistor 2SK817FEATURESDrain Current : I = 26A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 26 ADI Drain Current-Single Pluse 104 ADMP Total Dissipation @T =25 35 WD CMax. Operating Junction Temperature -55~150 TJStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 3.57th j-c1isc websitewww