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INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DF20DDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 200 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 20 ACP Total Power Dissipation@T =75 200 WD CT Max.Junction Temperature 175 JT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 0.75 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Sil