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3n210_3n2093n210_3n209

3N209-3N210DUAL GATE MOSFET VHF AMPLIFIERHigh-reliability discrete productsand engineering services since 1977FEATURES Available as HR (high reliability) screened per MIL-PRF-19500, JANTX level. Add HR suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding -PBF suffix.MAXIMUM RATINGSRating Symbol Value UnitDrain source voltage VDS 25 VdcVDG1Drain gate voltage 30 VdcVDG2IG1R -10IG1F 10Gate current mAdcIG2R -10IG2F 10Drain current continuous ID 30 mAdc3N209 3N210Total power dissipation @ TA = 25CPD mW300 350Derate above 25CmW/C1.71 2.80Storage channel temperature range Tstg -65 to 200 -65 to 175 COperating channel temperature Tchannel 200 150 CLead temperature, 1/16 from seated surface for 10 s 260 CELECTRICAL CHARACTERISTICS (TC = 25C)

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 3n210 3n209.pdf Проектирование, MOSFET, Мощность

 3n210 3n209.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 3n210 3n209.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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