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AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state Fast switching resistance, provide superior switching performance, and Improved dv/dt capability withstand high energy pulse in the avalanche and commutation mode. Application These devices are widely used in AC-DC power suppliers, AC-DC Switching Power Supply DC-DC converters and H-bridge PWM motor drivers. LCD / LED / PDP TV Lighting Solar Inverter Pin Description SYMBOL TO-220-3L TO-220F-3L Absolute Maximum Ratings (Tc=25 Unless otherwise noted) Typical Paramete