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isc N-Channel MOSFET Transistor AOT10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage-Continuous 30 VGSI Drain Current-Continuous 10 ADI Drain Current-Single Pluse 36 ADMP Total Dissipation @T =25 250 WD CT Max. Operating Junction Temperature -55~150 JStorage Temperature -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.5th j-c1isc websi