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APT15GP60BDF1600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss 100 kHz operation @ 400V, 19AC Low Gate Charge 200 kHz operation @ 400V, 12AG Ultrafast Tail Current shutoff SSOA ratedEMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT15GP60BDF1 UNITVCESCollector-Emitter Voltage600VGE Gate-Emitter Voltage20 Volts30VGEM Gate-Emitter Voltage TransientIC1 Continuous Collector Current @ TC = 25C 56AmpsIC2 Continuous Collector Current @ TC = 110C 27ICM Pulsed Collector Current 1 @ TC = 25C65SSOA Switching Safe Operat