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APT15GP60BDL(G)600V, 15A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.Features Typical Applications G Low Conduction Loss SSOA Rated Induction Heating CE Low Gate Charge RoHS Compliant Welding C Ultrafast Tail Current shutoff Medical G Low forward Diode Voltage (VF) High Power Telecom E Ultrasoft Recovery Diode Resonant Mode Phase ShiftedBridge MAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol ParameterUNITRatingsVCES Collector-Emitter Voltage600VoltsVGE Gate-Emitter Voltage