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AU10N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.3@10V 10A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-251AB Marking D U10N65S G D S Document ID Issued Date Revised Date Revision Page. Page 1 AS-3150232 2003/03/08 2012/05/16 D 5 AU10N65S N-Channel Enhancement Mode Power MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current ID 10 A Pulsed Drain Current IDM 30 A Power Dissipation PD 147 W Thermal Resistance,Junction-to-Case RJC 0.85 /W Single pulse avalanche energy EAS 400 mJ Junction Temperature TJ 150 Storage Temperature TSTG -