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AUTOMOTIVE GRADE AUIRF4905 HEXFET Power MOSFET Features Advanced Planar Technology VDSS -55V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.02 175C Operating Temperature Fast Switching ID -74A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S D G Description Specifically designed for Automotive applications, this cellular design of TO-220 HEXFET Power MOSFETs utilizes the latest processing techniques to AUIRF4905 achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power G D SMOSFETs are well known for, provides the designer with an extremely Gate Drain Sourceefficient and reliable device for use in Automotive and a wide variety
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auirf4905.pdf Проектирование, MOSFET, Мощность
auirf4905.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
auirf4905.pdf База данных, Инновации, ИМС, Транзисторы



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