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AUIRF4905S AUTOMOTIVE GRADE AUIRF4905L HEXFET Power MOSFET Features VDSS -55V Advanced Planar Technology P-Channel MOSFET RDS(on) max. 20m Low On-Resistance ID (Silicon Limited) -70A 150C Operating Temperature Fast Switching ID (Package Limited) -42A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D D Automotive Qualified * S S G D Description G Specifically designed for Automotive applications, this cellular design of TO-262 D2Pak HEXFET Power MOSFETs utilizes the latest processing techniques to AUIRF4905L AUIRF4905S achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power G D SMOSFETs are well known for, provides the designer with an extremely Gate Drain Sourceefficien