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PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)75AS Automotive Qualified *DescriptionSpecifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the latest processing techniques to achieveextremely low on-resistance per silicon area. Additional features ofDSthis design are a 175C junction operating temperature, fast switchingGspeed and improved repetitive avalanche rating . These featuresTO-220ABcombine to make this design an extremely efficient and reliableAUIRFB4410device for use