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AUIRFB4610 AUTOMOTIVE GRADE AUIRFS4610 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V Ultra Low On-Resistance RDS(on) typ. 11m Enhanced dV/dT and dI/dT capability 175C Operating Temperature max. 14m Fast Switching ID 73A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to achieve S D G extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast TO-220 D2Pak AUIRFB4610 AUIRFS4610 switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S