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AUIRFB8407AUTOMOTIVE GRADEAUIRFS8407AUIRFSL8407FeaturesHEXFET Power MOSFETl Advanced Process Technologyl New Ultra Low On-ResistanceVDSS 40VDl 175C Operating TemperatureRDS(on) typ. 1.4ml Fast Switching l Repetitive Avalanche Allowed up to Tjmax(SMD version) max. 1.8m l Lead-Free, RoHS CompliantG250AID (Silicon Limited) Automotive Qualified *SDescriptionID (Package Limited) 195A Specifically designed for Automotive applications, this HEXFETPower MOSFET utilizes the latest processing techniques to achieveDDextremely low on-resistance per silicon area. Additional features of Dthis design are a 175C junction operating temperature, fast switchingspeed and improved repetitive avalanche rating. These featurescombine to make this design an extremely efficient and reliableSSSDdevice for use in Automotive appl