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AUIRFB8409AUTOMOTIVE GRADE AUIRFS8409AUIRFSL8409FeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl New Ultra Low On-Resistance VDSS 40Vl 175C Operating TemperatureRDS(on) (SMD) typ. 0.97ml Fast Switching max. 1.2ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 409Al Automotive Qualified *ID (Package Limited) 195A SDescriptionSpecifically designed for Automotive applications, thisHEXFET Power MOSFET utilizes the latest processingtechniques to achieve extremely low on-resistance per siliconDDarea. Additional features of this design are a 175C junction Doperating temperature, fast switching speed and improvedrepetitive avalanche rating. These features combine to makeSthis design an extremely efficient and reliable device for useSSDDin Automotive applications