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PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically designed for Automotive applications, thisStripe Planar design of HEXFET Power MOSFETsutilizes the latest processing techniques to achieveSDlow on-resistance per silicon area. This benefit com-Gbined with the fast switching speed and ruggedizedSuper-220device design that HEXFET power MOSFETs are wellAUIRFBA1405known for, provides the designer with an extremelyefficient and reliable device for use in Autom