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PD - 96420AUTOMOTIVE GRADEAUIRFP2602HEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 24V Low On-Resistance 175C Operating Temperature RDS(on) typ. 1.25m Fast Switching max. 1.6m Repetitive Avalanche Allowed up to Tjmax G Lead-Free, RoHS CompliantID (Silicon Limited) 380A Automotive Qualified *SID (Package Limited) 180A DescriptionSpecifically designed for Automotive applications,Dthis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-resistance per silicon area. Additional features ofSthis design are a 175C junction operatingDGtemperature, fast switching speed and improvedrepetitive avalanche rating . These features combineTO-247ADto make this design an extremely efficient andreliable device for use in Automotive applicationsGDSand a wide variety