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AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve S extremely low on-resistance per silicon area. Additional features of G D this design are a 175C junction operating temperature, fast TO-247AC switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and G D Sreliable device for use in Automotive