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AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology DVDSS 300V Low On-Resistance 175C Operating Temperature RDS(on) typ. 56mFast Switching G 69mmax Repetitive Avalanche Allowed up to Tjmax SLead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFETs utilizes the latest processing techniques to S achieve low on-resistance per silicon area. This benefit com-D bined with the fast switching speed and ruggedized device de-G sign that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for TO-247AC use in Automotive and a wide variety of other applications. G D SGate Drain SourceOrdering Informa