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PD - 97621AUTOMOTIVE GRADEAUIRFZ34NFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.0.040Gl Fast Switchingl Fully Avalanche RatedS ID29Al Repetitive Avalanche Allowed upto Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSSpecifically designed for Automotive applications,Dthis cellular design of HEXFET Power MOSFETs Gutilizes the latest processing techniques to achieveTO-220ABlow on-resistance per silicon area. This benefitAUIRFZ34Ncombined with the fast switching speed andruggedized device design that HEXFET powerGDSMOSFETs are well known for, provides the designerGate Drain Sourcewith an extremely efficient and reliable device for usein Automotive and a wide variety of other appli