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PD - 96352AUTOMOTIVE GRADEAUIRL3705NFeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Logic-Level Gate DriveV(BR)DSS55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.01 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID S 89A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSSpecifically designed for Automotive applications, thisDCellular design of HEXFET Power MOSFETs utilizesGthe latest processing techniques to achieve low on-TO-220ABresistance per silicon area. This benefit combined with theAUIRL3705Nfast switching speed and ruggedized device design thatHEXFET power MOSFETs are well known for, providesGDSthe designer with an extremely efficient and reliableGate Drain Sourcedevice for use in Automotive and a wide variety of otherapplica