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PD - 97620AUTOMOTIVE GRADEAUIRLR2703 Advanced Planar TechnologyHEXFET Power MOSFET Logic-Level Gate Drive Low On-ResistanceD Dynamic dV/dT Rating V(BR)DSS 30V 175C Operating TemperatureRDS(on) max.45m Fast SwitchingGID (Silicon Limited) Fully Avalanche Rated 23A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited)20A Lead-Free, RoHS Compliant Automotive Qualified*DDescriptionSSpecifically designed for Automotive applications,Gthis cellular design of HEXFET Power MOSFETsD-Pakutilizes the latest processing techniques to achieveAUIRLR2703low on-resistance per silicon area. This benefitcombined with the fast switching speed andruggedized device design that HEXFET powerGDSMOSFETs are well known for, provides the designerGate Drain Sourcewith an extremely efficient and