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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC337/DAmplifier TransistorsNPN SiliconBC337,-16,-25,-40BC338,-16,-25,-40COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23Rating Symbol BC337 BC338 UnitCASE 2904, STYLE 17CollectorEmitter Voltage VCEO 45 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 50 30 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 800 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WattDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case RqJC 83.3 C/WELECTRICAL CHARACTERISTICS (TA = 25