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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137BD139TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD136, BD138, BD140ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD135 BD137 BD139 UNITCollector -Emitter Voltage VCEO 45 60 80 VCollector -Emitter Voltage (RBE=1k ) VCER 45 60 100 VCollector -Base Voltage VCBO 45 60 100 VVEBOEmitter Base Voltage 5.0 VICCollector Current 1.5 AICMCollector Peak Current 2.0 AIBBase Current 0.5 APower Dissipation @ Ta=25C PD 1.25 WDerate above 25C 10 mW/CPower Dissipation @ Tc=25C PD12.5 WDerate above 25C 100 mW/CPower Dissipation @ Tc=70C PD8.0 WOperating And Storage Junction Tj, Tstg - 55 to +150 CTemperature RangeTHERMAL CHARACTERISTI