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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITBD135 45VCBO Collector-base voltage BD137 Open emitter 60 V BD139 100 BD135 45VCEO Collector-emitter voltage BD137 Open base 60 V BD139 100 VEBO Emitter -base voltage Open collector 5 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 2 AIBM Base current-Peak 1 APt Total power dissipation Tmb70 8 WTj Junction temperature 150 Tstg Storage temperature -65~150 Tamb Operating ambient temperature -65~

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 bd135 bd137 bd139.pdf Проектирование, MOSFET, Мощность

 bd135 bd137 bd139.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bd135 bd137 bd139.pdf База данных, Инновации, ИМС, Транзисторы