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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD135; BD137; BD139NPN power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistors BD135; BD137; BD139FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mounting surface3 base Driver stages in hi-fi amplifiers and television circuits.DESCRIPTIONhandbook, halfpageNPN power transistor in a TO-126; SOT32 plastic2package. PNP complements: BD136, BD138 and BD140.31MAM254Top view1 2 3Fig.1 Simplified outline (TO-126; SOT32) andsymbol.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVCBO collector-base voltage open e