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SEMICONDUCTOR BD139TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.ABDCFEATURESEHigh Current. (Max. : 1.5A)FDC Current Gain : hFE=40Min. @IC=0.15AComplementary to BD140.GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1MAXIMUM RATING (Ta=25)E 3.5_+F 11.0 0.3CHARACTERISTIC SYMBOL RATING UNITG 2.9 MAXMH 1.0 MAXJ 1.9 MAXVCBOCollector-Base Voltage 100 VO +_K 0.75 0.15NP_+L 15.5 0.51 2 3VCEOCollector-Emitter Voltage 80 V_+M 2.3 0.1_+N 0.65 0.15VEBOEmitter-Base Voltage 5 VO 1.61. EMITTERP 3.4 MAX2. COLLECTORICCollector Current 1.5 A3. BASEIBBase Current 0.5 A1.25Ta=25Collector Power TO-126PCWDissipation10Tc=25TjJunction Temperature 150Tstg -55150 Storage Temperature RangeELECTRICAL CH