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DISCRETE SEMICONDUCTORSDATA SHEETBF1105; BF1105R; BF1105WRN-channel dual-gate MOS-FETsProduct specification1997 Dec 02Supersedes data of 1997 Dec 01File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WRFEATURES PINNING Short channel transistor with highPIN DESCRIPTIONhandbook, 2 columns 43forward transfer admittance to input1 sourcecapacitance ratio2 drain Low noise gain controlled amplifier3 gate 2up to 1 GHz.2 14 gate 1 Internal self-biasing circuit toTop view MSB035ensure good cross-modulationperformance during AGC and goodBF1105R marking code: NAp.DC stabilization.Fig.2 Simplified outlineAPPLICATIONS(SOT143R). VHF and UHF applications with 5 Vsupply voltage, such as televisiontuners and professionalcommunications e

 

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 bf1105 bf1105r bf1105wr 3.pdf Проектирование, MOSFET, Мощность

 bf1105 bf1105r bf1105wr 3.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 bf1105 bf1105r bf1105wr 3.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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