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DISCRETE SEMICONDUCTORS DATA SHEETBF245A; BF245B; BF245CN-channel silicon field-effect transistorsProduct specification 1996 Jul 30Supersedes data of April 1995NXP Semiconductors Product specificationBF245A; BF245B;N-channel silicon field-effect transistorsBF245CFEATURES PINNING Interchangeability of drain and source connectionsPIN SYMBOL DESCRIPTION Frequencies up to 700 MHz.1 d drain2 s sourceAPPLICATIONS3g gate LF, HF and DC amplifiers.DESCRIPTION1handbook, halfpage2General purpose N-channel symmetrical junction 3dfield-effect transistors in a plastic TO-92 variant package.gsMAM257CAUTIONThe device is supplied in an antistatic package. The Fig.1 Simplified outline (TO-92 variant) gate-source input must be protected against static and symbol.discharge during transport or handling.QUICK REFERENCE DAT